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| MMBT2222 / MMBT2222A MMBT2222 / MMBT2222A NPN Version 2006-05-15 Power dissipation - Verlustleistung 2.9 0.1 0.4 3 1.30.1 1.1 Surface Mount Si-Epi-Planar Switching Transistors Si-Epi-Planar Schalttransistoren fur die Oberflachenmontage NPN 250 mW SOT-23 (TO-236) 0.01 g Type Code 1 1.9 2 2.5 max Plastic case Kunststoffgehause Weight approx. - Gewicht ca. Plastic material has UL classification 94V-0 Gehausematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Dimensions - Mae [mm] 1=B 2=E 3=C Maximum ratings (TA = 25C) Collector-Emitter-volt. - Kollektor-Emitter-Spannung Collector-Base-voltage - Kollektor-Basis-Spannung Emitter-Base-voltage - Emitter-Basis-Spannung Power dissipation - Verlustleistung Collector current - Kollektorstrom (dc) Junction temperature - Sperrschichttemperatur Storage temperature - Lagerungstemperatur B open E open C open VCEO VCBO VEBO Ptot IC Tj TS Grenzwerte (TA = 25C) MMBT2222 30 V 60 V 5V 250 mW ) 600 mA -55...+150C -55...+150C 1 MMBT2222A 40 V 75 V 6V Characteristics (Tj = 25C) Min. DC current gain - Kollektor-Basis-Stromverhaltnis ) 2 Kennwerte (Tj = 25C) Typ. - - - - - - - - - - - - Max. - - - 300 - - 300 375 8 k 1.25 k 35 S 200 S IC IC IC IC = = = = 0.1 mA, 1 mA, 10 mA, 150 mA, VCE VCE VCE VCE = = = = 10 10 10 10 V V V V MMBT2222 MMBT2222A MMBT2222 MMBT2222A MMBT2222 MMBT2222A MMBT2222 MMBT2222A hFE hFE hFE hFE hFE hFE hfe hfe hie hie hoe hoe 35 50 75 100 30 40 50 75 2 k 0.25 k 5 S 25 S IC = 500 mA, VCE = 10 V 2) h-Parameters at/bei VCE = 10 V, f = 1 kHz, IC = 1 mA / 10 mA Small signal current gain Kleinsignal-Stromverstarkung Input impedance - Eingangs-Impedanz Output admittance - Ausgangs-Leitwert Characteristics (Tj = 25C) 1 2 Kennwerte (Tj = 25C) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschluss Tested with pulses tp = 300 s, duty cycle 2% - Gemessen mit Impulsen tp = 300 s, Schaltverhaltnis 2% http://www.diotec.com/ (c) Diotec Semiconductor AG 1 MMBT2222 / MMBT2222A Min. Collector-Emitter saturation voltage - Kollektor-Sattigungsspannung ) 2 Typ. - - - - - - - - - - - - -- - - - - - - - < 420 K/W 1) Max. 0.4 V 0.3 V 1.6 V 1.0 V 1.3 V 1.2 V 2.6 V 2.0 V 10 nA 10 nA 10 A 10 A 100 nA - 8 pF 25 pf 4 dB 10 ns 25 ns 225 ns 60 ns IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA MMBT2222 MMBT2222A MMBT2222 MMBT2222A MMBT2222 MMBT2222A MMBT2222 MMBT2222A MMBT2222 MMBT2222A MMBT2222 MMBT2222A MMBT2222A VCEsat VCEsat VCEsat VCEsat VBEsat VBEsat VBEsat VBEsat ICBO ICBO ICBO ICBO IEB0 fT CCBO CEBO - - - - - 0.65 V - - - - - - - 250 MHz - - - - - - - Base-Emitter saturation voltage - Basis-Sattigungsspannung 2) IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA Collector-Base cutoff current - Kollektor-Basis-Reststrom VCB = 50 V, (E open) VCB = 60 V, (E open) VCB = 50 V, Tj = 125C, (E open) VCB = 60 V, Tj = 125C, (E open) VEB = 3 V, (C open) Gain-Bandwidth Product - Transitfrequenz VCE = 20 V, IC = 20 mA, f = 100 MHz Collector-Base Capacitance - Kollektor-Basis-Kapazitat VCB = 10 V, IE = ie = 0, f = 1 MHz Emitter-Base Capacitance - Emitter-Basis-Kapazitat VEB = 0.5 V, IC = ic = 0, f = 1 MHz Noise figure - Rauschzahl VCE = 10 V, IC = 100 A, RG = 1 k, f = 1 kHz delay time rise time storage time fall time MMBT2222A F td tr ts tf RthA Switching times - Schaltzeiten (between 10% and 90% levels) VCC = 3 V, VBE = 0.5 V IC = 150 mA, IB1 = 15mA VCC = 3 V, IC = 150 mA, IB1 = IB2 = 15 mA Emitter-Base cutoff current - Emitter-Basis-Reststrom Thermal resistance junction to ambient air Warmewiderstand Sperrschicht - umgebende Luft Recommended complementary PNP transistors Empfohlene komplementare PNP-Transistoren Marking - Stempelung MMBT2709 / MMBT2709A MMBT2222 = 1B MMBT2222A = M1P 2 1 Tested with pulses tp = 300 s, duty cycle 2% - Gemessen mit Impulsen tp = 300 s, Schaltverhaltnis 2% Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschluss http://www.diotec.com/ (c) Diotec Semiconductor AG 2 |
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